Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible

Autor:	M. Nicolai L. Lorenz‐Meyer, Angelina Nikiforova, Helge Riemann, K. Dadzis, Robert Menzel
Rok vydání:	2020
Předmět:	Materials science mathematical modeling Crucible control engineering General Chemistry Condensed Matter Physics silicon crystal growth Monocrystalline silicon General Materials Science Composite material parameter estimation lumped parameter model
Zdroj:	Crystal Research and Technology. 55:2000044
ISSN:	1521-4079 0232-1300
DOI:	10.1002/crat.202000044
Popis:	In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. �� 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::321119cf8c9c69e2ce1675ab88b72f07 https://doi.org/10.1002/crat.202000044 Zobrazit plný text záznamu Plný text