Analysis of a Parasitic‐Diode‐Triggered Electrostatic Discharge Protection Circuit for 12 V Applications
| Autor: | Yong-Seo Koo, Byung-Seok Lee, Yil Suk Yang, Bo Bae Song |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
General Computer Science Electrostatic discharge Holding voltage Silicon controlled rectifier Trigger voltage lcsh:TK7800-8360 02 engineering and technology 01 natural sciences lcsh:Telecommunication Silicon-controlled rectifier lcsh:TK5101-6720 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Diode 010302 applied physics business.industry 020208 electrical & electronic engineering lcsh:Electronics Electrical engineering Electronic Optical and Magnetic Materials Electrostatic discharge protection Clamp business |
| Zdroj: | ETRI Journal, Vol 39, Iss 5, Pp 746-755 (2017) ETRI JOURNAL(39): 5 |
| ISSN: | 2233-7326 1225-6463 |
| Popis: | In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (V-t) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding n+/p+ floating regions. Moreover, the holding voltage (V-h) is improved by using segmented technology. The proposed circuit was fabricated using a 0.18-m bipolar-CMOS-DMOS process with a width of 100m. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the V-t of the proposed circuit increased from 14 V to 27.8 V, and V-h increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V. |
| Databáze: | OpenAIRE |
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