Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching Sensitivity
| Autor: | M. Campovecchio, Jerome Cheron, Denis Barataud, Didier Floriot, Michel Stanislawiak, Sébastien Mons, Philippe Eudeline, Wilfried Demenitroux, Tibault Reveyrand |
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| Přispěvatelé: | C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Computer science
business.industry 020208 electrical & electronic engineering Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Input impedance law.invention Power (physics) law Dispersion (optics) Limit (music) 0202 electrical engineering electronic engineering information engineering Return loss Electronic engineering Hardware_INTEGRATEDCIRCUITS business Electrical impedance Sensitivity (electronics) |
| Zdroj: | Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011 Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011, Apr 2011, Vienne, Austria. pp.81-84, ⟨10.1109/INMMIC.2011.5773327⟩ |
| DOI: | 10.1109/INMMIC.2011.5773327⟩ |
| Popis: | International audience; This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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