26.1% thin film gaas solar cell using epitaxial lift-off
| Autor: | Jccm Boukje Huijben, E.J. Haverkamp, Gerard Bauhuis, John J. Schermer, Peter Mulder |
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| Rok vydání: | 2009 |
| Předmět: |
Applied Materials Science
Renewable Energy Sustainability and the Environment business.industry Chemistry Quantum dot solar cell engineering.material Epitaxy Polymer solar cell Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer law.invention Lift (force) Optics Coating law Solar cell engineering Optoelectronics Thin film business |
| Zdroj: | Solar Energy Materials and Solar Cells, 93, 1488-1491 Solar Energy Materials and Solar Cells, 93, pp. 1488-1491 |
| ISSN: | 0927-0248 |
| Popis: | The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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