ScAlN nanowires: A cathodoluminescence study
| Autor: | P.R. Hageman, James H. Edgar, Elias Vlieg, Marcel A. Verheijen, Rositsa Yakimova, Gholamreza Yazdi, G.W.G. van Dreumel, T. Bohnen, Rienk E. Algra |
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| Rok vydání: | 2009 |
| Předmět: |
Applied Materials Science
Materials science Scanning electron microscope Applied Molecular Physics Nanowire Analytical chemistry Cathodoluminescence Solid State Chemistry Nitride Condensed Matter Physics Epitaxy Inorganic Chemistry Materials Chemistry Thin film High-resolution transmission electron microscopy Wurtzite crystal structure |
| Zdroj: | Journal of Crystal Growth, 311, 11, pp. 3147-3151 Journal of Crystal Growth, 311, 3147-3151 |
| ISSN: | 0022-0248 |
| Popis: | Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 mu m, a diameter between 50 and 150 run, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range. |
| Databáze: | OpenAIRE |
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