A No-Trim, Scaling-Friendly Thermal Sensor in 16nm FinFET Using Bulk Diodes as Sensing Elements
| Autor: | Matthias Eberlein, Harald Pretl |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Physics
Comparator business.industry 020208 electrical & electronic engineering 010401 analytical chemistry Bipolar junction transistor 02 engineering and technology Switched capacitor 01 natural sciences 0104 chemical sciences law.invention Capacitor Robustness (computer science) law 0202 electrical engineering electronic engineering information engineering Charge pump Optoelectronics Electrical and Electronic Engineering business Diode Voltage |
| Zdroj: | ESSCIRC |
| ISSN: | 2573-9603 |
| DOI: | 10.1109/lssc.2019.2938140 |
| Popis: | We present a simple, yet robust architecture to achieve accurate temperature sensing without the need for costly calibration. For the first time, the active bulk diode of a standard CMOS process is utilized in replacement of BJT devices. Two such diodes are forward biased by a charge pump, which periodically discharges two sampling capacitors across the diodes. The sampled voltages are then combined to generate PTAT and CTAT signals. A passive charge-balancing scheme creates a digital output, which only requires a comparator, an 8-bit capacitive divider and SAR logic. Occupying 2500 $\mu \text{m}^{2}$ active area in 16-nm FinFET, the sensor operates down to 0.85 V and features intrinsic supply robustness. It achieves an uncalibrated accuracy of +1.5/−2.0 °C (min/max) across the consumer temperature range, and dissipates 230 pJ in a 12.8 $\mu \text{s}$ conversion time. Due to the simplicity and low analog content of this concept, it is insensitive to future scaling and well suited for use at multiple locations in SoCs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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