Influence of the SiC/SiO2SiC MOSFET Interface Traps Distribution onC–VMeasurements Evaluated by TCAD Simulations
| Autor: | Ilaria Matacena, Giovanni Breglio, Andrea Irace, Luca Maresca, Santolo Daliento, Michele Riccio |
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| Přispěvatelé: | Maresca, Luca, Matacena, Ilaria, Riccio, Michele, Irace, Andrea, Breglio, Giovanni, Daliento, Santolo |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Field (physics) business.industry Transistor Semiconductor device modeling Energy Engineering and Power Technology 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology 01 natural sciences Threshold voltage law.invention chemistry.chemical_compound chemistry law 0103 physical sciences MOSFET Silicon carbide Calibration Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:2171-2179 |
| ISSN: | 2168-6785 2168-6777 |
| Popis: | The reduction of the trap density at the SiC/SiO2 interface of a SiC metal–oxide–semiconductor field-effect transistor (MOSFET) is still an open issue for development of the next generation. Since TCAD simulations are one of the most powerful tools adopted in the field of power semiconductor devices, in this article, we define the guidelines for the calibration of the TCAD model from the point of view of the interface traps modeling. We have carried out a qualitative analysis of the effect of the SiC/SiO2 interface traps properties on the $C$ – $V$ curve by means of TCAD simulations, to support the interpretation of the experimental $C$ – $V$ curves of a SiC MOSFET. A new approach for the simulation of the $C$ – $V$ curves of a SiC MOSFET is proposed as well. The aim of this article is the analysis of the effect of the SiC/SiO2 interface traps on the $C$ – $V$ curve by means of TCAD simulations. |
| Databáze: | OpenAIRE |
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