Molecular ion sources for low energy semiconductor ion implantation (invited)
| Autor: | A. V. Kozlov, S. N. Dugin, Efim Oks, S. Minaev, R. P. Kuibeda, Vasily Gushenets, Ady Hershcovitch, Timur Kulevoy, O. Alexeyenko, G. N. Kropachev, D. N. Seleznev, Alexey S. Bugaev, G. Yu. Yushkov, Alexey V. Vizir |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Carborane acid Polyatomic ion Inorganic chemistry chemistry.chemical_element Nanotechnology 01 natural sciences Ion source 010305 fluids & plasmas Ion chemistry.chemical_compound Ion implantation Ion beam deposition chemistry 0103 physical sciences Carborane Boron Instrumentation |
| Zdroj: | Review of Scientific Instruments. 87:02B702 |
| ISSN: | 1089-7623 0034-6748 |
| DOI: | 10.1063/1.4931719 |
| Popis: | Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. |
| Databáze: | OpenAIRE |
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