Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
| Autor: | Xinyu Liu, Xuanwu Kang, Yuanyuan Zhao, Yue Sun, Guoqi Zhang, Ke Wei, Yingkui Zheng, Hao Wu |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics high forward current density leakage Schottky barrier diode (SBD) Schottky diode Low leakage Gallium nitride mesa vertical 01 natural sciences Omega GaN Electronic Optical and Magnetic Materials Anode chemistry.chemical_compound chemistry 0103 physical sciences quasi transmission-line-pulse (TLP) Electrical and Electronic Engineering Device failure Forward current Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices, 68(3) |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of ${1}~\mu \text{m}$ has achieved a very high ON/ OFF current ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}{)}$ of $10^{{12}}$ with a low leakage current of $\sim 10^{-{9}}$ A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}{)}$ of 0.3 $\text{m}\Omega \cdot $ cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) ${I}$ – ${V}$ test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications. |
| Databáze: | OpenAIRE |
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