Temperature dependence of tunable resonators on FR4 and silicon
| Autor: | Cédric Quendo, Jerome Billoue, Denis Le Berre, July Paola Cortes, Jessica Benedicto, Yves Quéré, Damien Valente, Rozenn Allanic, David Chouteau, Virginie Grimal |
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| Přispěvatelé: | Lab-STICC_UBO_MOM_DIM, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2017 |
| Předmět: |
Electrothermal analysis
Materials science Silicon chemistry.chemical_element Frequency shift 02 engineering and technology Substrate (electronics) 7. Clean energy Temperature measurement law.invention Resonator law 0202 electrical engineering electronic engineering information engineering Tunable resonators Active filter Active filters PIN diode business.industry 020208 electrical & electronic engineering 020206 networking & telecommunications [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry Temperature dependence Optoelectronics business Driven element Silicon devices |
| Zdroj: | Asia Pacific Microwave Conference Proceedings, APMC 2017 Asia Pacific Microwave Conference Proceedings, APMC 2017, Nov 2017, Kuala Lumpur, Malaysia. ⟨10.1109/APMC.2017.8251683⟩ |
| DOI: | 10.1109/apmc.2017.8251683 |
| Popis: | International audience; This paper deals with the impact of the temperature on tunable resonators with regard to the frequency shift, the current consumption and the insertion losses in the 30 °C to 150 °C range. Two different technologies have been selected; the first one is a FR4 technology, where the tunability is performed with a PIN diode, whereas on the second one, the resonators are designed on a silicon substrate with an integrated active element. In each technology, the active component switches from an open-ended to a short-ended resonator. This paper presents three different configurations; one on the FR4 substrate where the resonant frequency switches from 2.8 GHz to 1.45 GHz and two others, on the silicon substrate, where the first resonator is designed in the same frequency range and switches from 2.96 GHz to 2.1 GHz whereas the second one is designed at higher frequency (commutes from 7.3 GHz to 3.9 GHz). Electromagnetic simulations are compared to the measurements and are presented between 30 °C and 150 °C. Current consumption elements are also compared between the two technologies. |
| Databáze: | OpenAIRE |
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