Hot carrier transport limits the displacive excitation of coherent phonons in bismuth
| Autor: | Davide Boschetto, Tony F. Heinz, Germán Sciaini, Giriraj Jnawali, T. Payer, M. Horn-von Hoegen, Leandro M. Malard, L. Kremeyer, F. Thiemann, F.-J. Meyer zu Heringdorf |
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| Přispěvatelé: | Laboratoire d'optique appliquée (LOA), École Nationale Supérieure de Techniques Avancées (ENSTA Paris)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Phonon chemistry.chemical_element 02 engineering and technology Physik (inkl. Astronomie) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Bismuth Photoexcitation Condensed Matter::Materials Science Amplitude chemistry [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] Condensed Matter::Superconductivity Excited state 0103 physical sciences Femtosecond 010306 general physics 0210 nano-technology Excitation ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2021, 119 (9), pp.091601. ⟨10.1063/5.0056813⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/5.0056813⟩ |
| Popis: | We performed femtosecond transient reflectivity measurements on epitaxially grown bismuth (Bi) films in the weak photoexcitation regime. Single crystalline ultrathin Bi films down to a thickness of 7 nm enabled us to determine a clear correspondence between the amplitude of the coherent A1g phonon and the photoexcitation level. We were able to empirically measure the effective hot carrier penetration length that determines the excited carrier density governing the magnitude of the coherent A1g phonon in Bi. Our findings suggest that the transport behavior of hot carriers is to be taken into consideration in order to provide insights into the mechanism for the displacive excitation of coherent phonons. |
| Databáze: | OpenAIRE |
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