Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life
| Autor: | Michel Stanislawiak, Cédric Duperrier, Philippe Eudeline, Farid Temcamani, Jean Baptiste Fonder, Hichame Maanane, Olivier Latry |
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| Přispěvatelé: | Equipes Traitement de l'Information et Systèmes (ETIS - UMR 8051), Ecole Nationale Supérieure de l'Electronique et de ses Applications (ENSEA)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY), Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Thales Air Systems, Thales Group [France]-Thales Group [France], Thales Group [France], Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-THALES [France], THALES [France] |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
02 engineering and technology High-electron-mobility transistor 01 natural sciences Reliability (semiconductor) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality 010302 applied physics business.industry Amplifier Electrical engineering 020206 networking & telecommunications High voltage Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) [SPI.TRON]Engineering Sciences [physics]/Electronics Amplitude Optoelectronics S band business Voltage |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, Elsevier, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩ Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩ |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2012.04.024⟩ |
| Popis: | International audience; AlGaN/GaN HEMTs are on the way to lead the RF-power amplification field according to their outstanding performances. However, due to its relative youth, reliability studies in several types of operating conditions allow to understand mechanisms peculiar to this technology and responsible for the wearing out of devices. This paper reports the reliability study on two power amplifiers using AlGaN/GaN HEMT. Based on results of a previous study of 1280 h in standard operating conditions wherein no evolution of electrical parameters have been observed, two ageing tests in deep class-AB (432 h) and class-B (795 h) are performed under pulsed-RF operating life at high drain bias voltages and saturated operation. This study shows a drift in RF performances which is linked with the evolution of electrical parameters (RDSON, gm and VP). Similar kinetics and amplitude of degradations are observed revealing quasi-similar contribution of thermal effects in both cases. Degradations are supposed to be related to trapped charges phenomena induced by high voltage operating conditions. Although, several results attest to this hypothesis, a part of the evolutions seems to be linked with structural changes. |
| Databáze: | OpenAIRE |
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