Large Carrier Mobilities in ErMnO3 Conducting Domain Walls Revealed by Quantitative Hall Effect Measurements
Autor: | Michael Campbell, Jakob Schaab, Patrick W. Turner, James P. V. McConville, Shane J. McCartan, Amit Kumar, R. G. P. McQuaid, J. Marty Gregg |
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Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Kelvin probe force microscope
Materials science Condensed matter physics Mechanical Engineering Oxide Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal conduction 01 natural sciences 0104 chemical sciences chemistry.chemical_compound Nanoelectronics chemistry Hall effect Microscopy General Materials Science 0210 nano-technology Electrical conductor Voltage |
Zdroj: | Turner, P W, McConville, J P V, McCartan, S J, Campbell, M H, Schaab, J, McQuaid, R G P, Kumar, A & Gregg, J M 2018, ' Large Carrier Mobilities in ErMnO3 Conducting Domain Walls Revealed by Quantitative Hall Effect Measurements ', Nano Letters, vol. 18, no. 10, pp. 6381-6386 . https://doi.org/10.1021/acs.nanolett.8b02742 |
Popis: | Kelvin Probe Force Microscopy (KPFM) has been used to directly and quantitatively measure Hall voltages, developed at conducting tail-to-tail domain walls in ErMnO3 single crystals, when current is driven in the presence of an approximately perpendicular magnetic field. Measurements across a number of walls, using two different atomic force microscope platforms, consistently suggest that the active p-type carriers have unusually large room temperature mobilities: of the order of hundreds of square centimetres per volt second (cm2V-1s-1); associated carrier densities were estimated to be of the order of 1013cm-3. Such mobilities, at room temperature, are high in comparison to both bulk oxide conductors and LaAlO3-SrTiO3 sheet conductors. High carrier mobilities are encouraging for the future of domain-wall nanoelectronics and, significantly, also suggest the feasibility of meaningful investigations into dimensional confinement effects in these novel domain wall systems. |
Databáze: | OpenAIRE |
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