38/60 GHz Dual-Frequency 3-Stage Transformer-Based Differential Inductor-Peaked Rectifier in 40-nm CMOS Technology
| Autor: | Yun Fang, Gernot Hueber, Hao Gao |
|---|---|
| Přispěvatelé: | Integrated Circuits |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Threshold voltage Frequency band Inductor law.invention Windings Rectifier Sensitivity law Transponder (satellite communications) Radio frequency mm-wave Electrical and Electronic Engineering Transformer Semiconductor device measurement dual frequency business.industry CMOS Electrical engineering Voltage measurement Couplings rectifier business Sensitivity (electronics) |
| Zdroj: | IEEE Solid-State Circuits Letters, 4:9521562, 174-177. Institute of Electrical and Electronics Engineers |
| ISSN: | 2573-9603 |
| Popis: | This letter presents a 38/60 GHz dual-frequency band 3-stage transformer-based inductor-peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used in a wirelessly powered receiver in a monolithic IoT transponder. Its sensitivity is a bottleneck for the transponder’s range. With the dual-frequency operating function, the wirelessly powered distance could be optimized based on the selected frequency band. In this letter, a new vertical integration transformer with a compact size is proposed and implemented to achieve stage-cascading, inductor peaking, and dual-frequency matching functions simultaneously. In addition, bulk-drain-connected transistors further improve the rectifier’s efficiency and sensitivity. In this combination, the 3-stage transformer-based inductor-peaked rectifier improves sensitivity at 38 GHz and 60 GHz frequency bands. The 1-V sensitivity is -6 dBm at the 38 40 GHz frequency band and -5 dBm at 57 64 GHz frequency band. This mm-wave dual-band rectifier achieves the peak 1-V sensitivity of -7.8 dBm at 40 GHz. |
| Databáze: | OpenAIRE |
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