Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces
| Autor: | G. J. Lapeyre, A. P. Young, Fernando Ponce, H. Cruguel, T. M. Levin, J. Schäfer, Y. Yang, Charles W. Tu, Yoshiki Naoi, S. H. Xu, G. H. Jessen, Leonard J. Brillson, J. D. McKenzie, C. R. Abernathy |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Physics::Computational Physics
Materials science business.industry Mechanical Engineering Fermi level Schottky diode Cathodoluminescence Electronic structure Condensed Matter Physics Electronic states Condensed Matter::Materials Science symbols.namesake Mechanics of Materials symbols Optoelectronics General Materials Science Physics::Chemical Physics Spectroscopy business Quantum well Molecular beam epitaxy |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(00)00367-6 |
| Popis: | We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal–GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect