Analysis of Phase Noise Degradation Considering Switch Transistor Capacitances for CMOS Voltage Controlled Oscillators
| Autor: | Shoichi Hara, Rui Murakami, Akira Matsuzawa, Kenichi Okada |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
FO4 business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Inductor Switched capacitor Electronic Optical and Magnetic Materials law.invention Voltage-controlled oscillator CMOS Hardware_GENERAL law Phase noise Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit Electrical and Electronic Engineering business |
| Zdroj: | IEICE Transactions on Electronics. :777-784 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e93.c.777 |
| Popis: | SUMMARY In this paper we present a study on the design optimization of voltage-controlled oscillators. The phase noise of LC-type oscillators is basically limited by the quality factor of inductors. It has been experimentally shown that higher-Q inductors can be achieved at higher frequencies while the oscillation frequency is limited by parasitic capacitances. In this paper, the minimum transistor size and the degradation of the quality factor caused by a switched-capacitor array are analytically estimated, and the maximum oscillation frequency of VCOs is also derived from an equivalent circuit by considering parasitic capacitances. According to the analytical evaluation, the phase noise of a VCO using a 65 nm CMOS is 2 dB better than that of a 180 nm CMOS. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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