Germanium Nanowire Epitaxy: Shape and Orientation Control
| Autor: | Ann F. Marshall, Paul C. McIntyre, Hemant Adhikari, Christopher E. D. Chidsey |
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| Rok vydání: | 2006 |
| Předmět: |
Silicon
Materials science Surface Properties Nanowire Nanoparticle chemistry.chemical_element Bioengineering Tapering Germanium Chemical vapor deposition Epitaxy Sensitivity and Specificity Microscopy General Materials Science Particle Size Phase diagram Nanotubes business.industry Mechanical Engineering General Chemistry Condensed Matter Physics Crystallography chemistry Microscopy Electron Scanning Optoelectronics business |
| Zdroj: | Nano Letters. 6:318-323 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl052231f |
| Popis: | Epitaxial growth of nanowires along the 111 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 111 growth, 110 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al. |
| Databáze: | OpenAIRE |
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