Threshold Voltage Model for Mesa-Isolated Small Geometry Fully Depleted SOI MOSFETs Based on Analytical Solution of 3-D Poisson's Equation
| Autor: | Nandita DasGupta, Guruprasad Katti, Amitava DasGupta |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Threshold voltage
Differentiation (calculus) Separation of variables Silicon on insulator Poisson equation Poisson distribution symbols.namesake MOSFET Electronic engineering Silicon on insulator technology Boundary value problem Electrical and Electronic Engineering MOSFET devices Bisection method Physics Mathematical models Boundary conditions Mathematical analysis Schottky diode Capacitance voltace extraction Laplace equation Computer simulation CMOS integrated circuits Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Small geometry symbols Poisson's equation |
| Zdroj: | IEEE Transactions on Electron Devices. 51:1169-1177 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2004.830648 |
| Popis: | A threshold voltage model for mesa-isolated fully depleted silicon-on-insulator (FDSOI) MOSFETs, based on the analytical solution of three-dimensional (3-D) Poisson's equation is presented for the first time in this paper. The separation of variables technique is used to solve the 3-D Poisson's equation analytically with appropriate boundary conditions. Simple and accurate analytical expressions for the threshold voltage of the front and the back gate are derived. The model is able to predict short channel as well as narrow width effects in mesa-isolated FDSOI MOSFETs. The model is validated by comparing with the experimental results as well as with the numerical results available in the literature. ? 2004 IEEE. |
| Databáze: | OpenAIRE |
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