A measurement technique for thermoelectric power of CMOS layers at the wafer level
| Autor: | Gian Carlo Cardinali, Fulvio Mancarella, Alberto Roncaglia |
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| Rok vydání: | 2006 |
| Předmět: |
Engineering
Thermoelectric power Wafer level business.industry Instrumentation CMOS Metals and Alloys Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Test structure Seebeck coefficient Heat exchanger Electronic engineering Wafer Sensitivity (control systems) Electrical and Electronic Engineering business |
| Zdroj: | Sensors and actuators. A, Physical 132 (2006): 289–295. doi:10.1016/j.sna.2006.03.028 info:cnr-pdr/source/autori:Mancarella F; Roncaglia A; Cardinali GC/titolo:A measurement technique for thermoelectric power of CMOS layers at the wafer level/doi:10.1016%2Fj.sna.2006.03.028/rivista:Sensors and actuators. A, Physical (Print)/anno:2006/pagina_da:289/pagina_a:295/intervallo_pagine:289–295/volume:132 |
| ISSN: | 0924-4247 |
| Popis: | We propose a method aimed at executing accurate thermoelectric power measurements at the wafer level on micromachined test structures. In order to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level test instrumentation, a special purpose extraction technique is applied. The influence of air-convection and heating/cooling effects on the measurement is also discussed by carefully evaluating the results of finite-element simulations of heat exchange in the test structure. In order to validate the technique, test measurements on p and n-doped polysilicon layers are presented and compared with other results from the literature. Moreover, the accuracy of the measurement technique and its temperature resolution are discussed. |
| Databáze: | OpenAIRE |
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