High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
| Autor: | Alberto Salleo, Koen Vandewal, Scott Himmelberger, Zhenan Bao, Björn Lüssem, Ying Diao, Peng Wei, Benjamin D. Naab |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Organic electronics Materials science Dopant Mechanical Engineering Transistor Doping technology industry and agriculture Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Pentacene chemistry.chemical_compound chemistry Mechanics of Materials law General Materials Science Grain boundary Thin film 0210 nano-technology |
| Zdroj: | Advanced Materials. 25:4663-4667 |
| ISSN: | 0935-9648 |
| Popis: | An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films. |
| Databáze: | OpenAIRE |
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