Maskless etching of silicon using patterned microdischarges

Autor:	R. M. Sankaran, Konstantinos P. Giapis
Rok vydání:	2001
Předmět:	Void (astronomy) Plasma etching Physics and Astronomy (miscellaneous) Silicon business.industry Analytical chemistry chemistry.chemical_element Plasma Cathode law.invention chemistry law Torr Optoelectronics Plasma diagnostics business Caltech Library Services Laser drilling
Zdroj:	Applied Physics Letters. 79:593-595
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1388867
Popis:	Microdischarges in flexible copper-polyimide structures with hole diameters of 200 µm have been used as stencil masks to pattern bare silicon in CF4/Ar chemistry. The discharges were operated at 20 Torr using the substrate as the cathode, achieving etch rates greater than 7 µm/min. Optical emission spectroscopy provides evidence of excited fluorine atoms. The etch profiles show a peculiar shape attributed to plasma expansion into the etched void. Forming discharges in multiple hole and line shapes permits direct pattern transfer in silicon and could be an alternative to ultrasonic milling and laser drilling.
Databáze:	OpenAIRE
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