Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP

Autor:	Y. Le Bellego, Sophie Bouchoule, P Win, H Sik, Gilles Patriarche, P Boulet, Abdallah Ougazzaden, G Le Mestreallan
Rok vydání:	1998
Předmět:	business.industry Chemistry Heterojunction Condensed Matter Physics Epitaxy Laser law.invention Inorganic Chemistry chemistry.chemical_compound High resistivity Planar Optics law Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Trimethylindium business Layer (electronics)
Zdroj:	Scopus-Elsevier
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)00706-4
Popis:	Selective planar regrowth of high resistivity (as high as 10 9 Ω cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyle (Fe(C 5 H 5 ) 2 ) as the reactant gases. The shape of the growth around masked mesas without any overhang of the mask has been studied as a function of both the growth conditions and the mesa height. Finally, an optimization of the growth conditions has been performed to planarize ridges as high as 2 μm, the layer quality being characterized by SEM.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cca064ea593676ef3beb197203dd9a7 https://doi.org/10.1016/s0022-0248(98)00706-4 Zobrazit plný text záznamu Full Text from ScienceDirect