Advanced dispersion engineering of a III-nitride micro-resonator for a blue frequency comb
| Autor: | Ali Eshaghian Dorche, Thomas Wunderer, Dogan Timucin, David Eric Schwartz, Noble M. Johnson, Krishnan Thyagarajan |
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| Rok vydání: | 2020 |
| Předmět: |
Photon
Materials science business.industry Photonic integrated circuit FOS: Physical sciences Physics::Optics 02 engineering and technology Laser pumping Nitride 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics 010309 optics Frequency comb Resonator Semiconductor 0103 physical sciences Dispersion (optics) Optoelectronics 0210 nano-technology business Physics - Optics Optics (physics.optics) |
| Zdroj: | Optics Express. 28:30542 |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/oe.399901 |
| Popis: | A systematic dispersion engineering approach is presented toward designing a III-nitride micro-resonator for a blue frequency comb. The motivation for this endeavor is to fill the need for compact, coherent, multi-wavelength photon sources that can be paired with, e.g., the 171Yb+ ion in a photonic integrated chip for optical sensing, time-keeping, and quantum computing applications. The challenge is to overcome the normal material dispersion exhibited by the otherwise ideal (i.e., low-loss and large-Kerr-coefficient) AlGaN family of materials, as this is a prerequisite for bright-soliton Kerr comb generation. The proposed approach exploits the avoided-crossing phenomenon in coupled waveguides to achieve strong anomalous dispersion in the desired wavelength range. The resulting designs reveal a wide range of dispersion response tunability, which is expected to allow access to the near-UV wavelength regime as well. Numerical simulations of the spatio-temporal evolution of the intra-cavity field under continuous-wave laser pumping confirm that such a structure is capable of generating a broadband blue bright-soliton Kerr frequency comb. The proposed micro-resonator heterostructure is amenable to the current state-of-the-art growth and fabrication methods for AlGaN semiconductors. |
| Databáze: | OpenAIRE |
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