Ultrahigh efficiencies in vertical epitaxial heterostructure architectures
| Autor: | Mark C. A. York, F. Proulx, M. M. Wilkins, Richard Arès, Karin Hinzer, S. Fafard, Vincent Aimez, Denis Masson, Christopher E. Valdivia |
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| Přispěvatelé: | Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire de Génie des Procédés et Matériaux - EA 4038 (LGPM), CentraleSupélec |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Infrared Photovoltaic system Heterojunction 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology Epitaxy 7. Clean energy 01 natural sciences [SPI]Engineering Sciences [physics] 0103 physical sciences Optoelectronics 0210 nano-technology business Absorption (electromagnetic radiation) Single crystal ComputingMilieux_MISCELLANEOUS Voltage |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2016, 108 (7), ⟨10.1063/1.4941240⟩ |
| ISSN: | 0003-6951 |
| Popis: | Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting volt... |
| Databáze: | OpenAIRE |
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