On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
| Autor: | G.-F. Dalla Betta, Giovanni Soncini, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Giovanni Verzellesi |
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| Přispěvatelé: | Verzellesi, G., DALLA BETTA, G. F., Bosisio, Luciano, Boscardin, M., Pignatel, G. U., Soncini, G. |
| Rok vydání: | 1999 |
| Předmět: |
High resistivity silicon
Materials science Silicon business.industry Gated diode Gate length generation lifetime high-resistivity silicon chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Carrier lifetime Electronic Optical and Magnetic Materials chemistry Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business Hardware_LOGICDESIGN Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 46:817-820 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.753724 |
| Popis: | We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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