Germanium on insulator near-infrared photodetectors fabricated by layer transfer
| Autor: | A. De Iacovo, D. Fulgoni, M. Palmer, Gaetano Assanto, Lorenzo Colace, Vito Sorianello, L. Nash |
|---|---|
| Přispěvatelé: | Sorianello, V, De Iacovo, A, Colace, L, Assanto, Gaetano, Fulgoni, D, Nash, L, Palmer, M. |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Wafer bonding Metals and Alloys Photodetector chemistry.chemical_element Germanium Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Photodiode law.invention Responsivity Optics chemistry law Materials Chemistry Optoelectronics business Current density Dark current |
| Zdroj: | Thin Solid Films. 518:2501-2504 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.09.134 |
| Popis: | We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si The minimum current density is 50 mu A/cm(2) at 1 V reverse bias. the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0 28 A/W at 1.55 micron at a reverse voltage of 5 V (C) 2009 Elsevier |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect