Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

Autor:	Gerhard Wachutka, Nando Kaminski, E. Niemann, W. Kaindl, M. Lades
Rok vydání:	1999
Předmět:	Materials science Deep-level transient spectroscopy Dopant Doping Analytical chemistry Schottky diode chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Ionization Materials Chemistry Electrical and Electronic Engineering Spectroscopy Boron Diode
Zdroj:	Scopus-Elsevier
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-999-0006-1
Popis:	In order to measure the ionization time constants of dopants in 4H/6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of the results obtained by AS shows excellent agreement with those obtained by DLTS, yielding the base for an evaluation of incomplete ionization effects in SiC devices within usual operation ranges. The measured data has been analyzed using numerical drift-diffusion simulations based on the method of finite-elements. A numerical investigation of the different freeze-out characteristics of free carriers in p+n, n+p, and Schottky diodes shows that unlike in the case of B, the ionization time constant of Al can be exclusively measured in the highly doped region of a p+n diode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::134207518f55290de6db50c267d76f56 https://doi.org/10.1007/s11664-999-0006-1 Zobrazit plný text záznamu Full text from SpringerLink