Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
| Autor: | Daniel Queen, McDonald Robinson, Cameron Kopas, B. Wagner, Justin Gonzales, James Huffman, Shengke Zhang, Nathan Newman |
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| Rok vydání: | 2021 |
| Předmět: |
Josephson effect
Condensed Matter - Materials Science Materials science Condensed Matter - Mesoscale and Nanoscale Physics Passivation business.industry Physics QC1-999 Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Physics and Astronomy Applied Physics (physics.app-ph) Physics - Applied Physics Dielectric Microstrip Condensed Matter::Materials Science Resonator Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Optoelectronics Dissipation factor Thin film business Microwave |
| Zdroj: | AIP Advances, Vol 11, Iss 9, Pp 095007-095007-5 (2021) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/5.0041525 |
| Popis: | In this study, we show that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at single-photon powers and sub-Kelvin temperatures (≈40 mK). This low loss enables their use in a wide range of devices, including coplanar, microstrip, and stripline resonators, as well as layers for device isolation, interwiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths and minimal over-etch to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally evaporated ≈1 µm thick amorphous germanium (a-Ge) films deposited on Si (100) have effective single-photon loss tangents of 4–5 × 10−6 and 9 μm-thick chemical vapor deposited homoepitaxial single-crystal Si has effective single-photon loss tangents of 4–14 × 10−6. Material characterization suggests that interface contamination could be the limiting factor for the loss. |
| Databáze: | OpenAIRE |
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