Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors
| Autor: | Puebla, Sergio, Pucher, Thomas, Rouco Gómez, Víctor, Sánchez Santolino, Gabriel, Xie, Yong, Zamora Castro, Víctor, Cuéllar Jiménez, Fabián Andrés, Mompean, Federico, León Yebra, Carlos, Island, Joshua O., García Hernández, Mar, Santamaría Sánchez-Barriga, Jacobo, Munuera, Carmen, Castellanos Gómez, Andrés |
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| Přispěvatelé: | European Research Council, European Commission, Comunidad de Madrid, Ministerio de Ciencia e Innovación (España), Shaanxi Provincial Key Laboratory Project of Department of Education |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
Freestanding complex oxide
Molybdenum disulfide (MoS2) Física de materiales Mechanical Engineering Física del estado sólido General Materials Science Bioengineering General Chemistry Condensed Matter Physics Barium titanate (BaTiO3) Ferroelectric perovskite oxide Ferroelectric field effect transistor |
| Zdroj: | E-Prints Complutense. Archivo Institucional de la UCM instname Digital.CSIC. Repositorio Institucional del CSIC |
| Popis: | [EN] We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to it polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices. European Research Council (ERC) through the project 2DTOPSENSE (GA 755655) European Union’sHorizon 2020 research and innovation program (Graphene Core2-Graphenebased disruptive technologies and Grant Agreement 881603 Graphene Core3-Graphene-based disruptive technologies) EU FLAG-ERA through the project To2Dox (JTC-2019-009) Comunidad de Madrid through the project CAIRO-CM project (Y2020/NMT-6661) Spanish Ministry of Science and Innovation through the projects PID2020-118078RBI00 RTI2018-099054-J-I00 and IJC2018-038164-I, PRE2018-084818 Key Research and Development Program of Shaanxi (Program No.2021KW-02). |
| Databáze: | OpenAIRE |
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