New Approaches and Understandings in the Growth of Cubic Silicon Carbide
| Autor: | Valdas Jokubavicius, Mikael Syväjärvi, Massimo Zimbone, Marco Mauceri, Rositsa Yakimova, Anna Marzegalli, Ioannis Deretzis, Leo Miglio, Giuseppe Fisicaro, Michael Schöler, Emilio Scalise, Manuel Kollmuss, Francesco La Via, Corrado Bongiorno, Ruggero Anzalone, Antonino La Magna, Peter J. Wellmann, Danilo Crippa, Filippo Giannazzo, Andrey Sarikov, Cristiano Calabretta, Viviana Scuderi, Marcin Zielinski, Philipp Schuh |
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| Přispěvatelé: | La Via, F, Zimbone, M, Bongiorno, C, La Magna, A, Fisicaro, G, Deretzis, I, Scuderi, V, Calabretta, C, Giannazzo, F, Zielinski, M, Anzalone, R, Mauceri, M, Crippa, D, Scalise, E, Marzegalli, A, Sarikov, A, Miglio, L, Jokubavicius, V, Syvajarvi, M, Yakimova, R, Schuh, P, Scholer, M, Kollmuss, M, Wellmann, P |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Materials science media_common.quotation_subject 02 engineering and technology Review 01 natural sciences 3C-SiC heteroepitaxy bulk growth compliant substrates defects stress Stress (mechanics) 3C‐SiC 0103 physical sciences General Materials Science Quality (business) media_common 010302 applied physics Low stress Microscopy QC120-168.85 Cubic silicon carbide QH201-278.5 021001 nanoscience & nanotechnology Condensed Matter Physics Engineering (General). Civil engineering (General) Engineering physics TK1-9971 Descriptive and experimental mechanics Defect Electrical engineering. Electronics. Nuclear engineering TA1-2040 0210 nano-technology ddc:600 Compliant substrate Den kondenserade materiens fysik |
| Zdroj: | Materials, Vol 14, Iss 5348, p 5348 (2021) Materials |
| ISSN: | 1996-1944 |
| Popis: | In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics. Funding Agencies|European UnionEuropean Commission [720827] |
| Databáze: | OpenAIRE |
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