A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer
| Autor: | Kristen M. Burson, Zhu-Jun Wang, Marc Georg Willinger, Christin Büchner, Markus Heyde, Robert Schlögl, Hans-Joachim Freund |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon dioxide General Physics and Astronomy Nanotechnology 02 engineering and technology Substrate (electronics) 010402 general chemistry 01 natural sciences law.invention chemistry.chemical_compound law General Materials Science Environmental scanning electron microscope Auger electron spectroscopy business.industry General Engineering Wide-bandgap semiconductor Dangling bond 021001 nanoscience & nanotechnology 0104 chemical sciences Electron diffraction chemistry Optoelectronics Scanning tunneling microscope 0210 nano-technology business |
| Zdroj: | ACS Nano |
| Popis: | An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly. |
| Databáze: | OpenAIRE |
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