Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics
| Autor: | Franz-Josef Haug, Quentin Jeangros, Christophe Ballif, Johannes P. Seif, Stefaan De Wolf, Andrea Tomasi, Nicolas Wyrsch, Gizem Nogay, Yannick Riesen |
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| Rok vydání: | 2016 |
| Předmět: |
Amorphous silicon
Materials science Silicon Schottky barrier Carrier transport chemistry.chemical_element 02 engineering and technology 01 natural sciences contact resistivity chemistry.chemical_compound 0103 physical sciences Electrical and Electronic Engineering temperature dependence 010302 applied physics nanocrystalline silicon business.industry Doping technology industry and agriculture Nanocrystalline silicon Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Nanocrystalline material Electronic Optical and Magnetic Materials Amorphous solid chemistry solar cells Optoelectronics silicon heterojunction (SHJ) 0210 nano-technology business |
| Zdroj: | IEEE Journal of Photovoltaics. 6:1654-1662 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor ( FF ) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF . Importantly, our cell parameter analysis, performed in a temperature range from −100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at −100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at −100 °C using doped nanocrystalline layers, compared with saturation onset at −60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation. |
| Databáze: | OpenAIRE |
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