Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods
| Autor: | Xue Wang, Stephan Merzsch, Hergo-Heinrich Wehmann, Jiandong Wei, Martin Strassburg, Andreas Waag, M. Al-Suleiman, S. Fuendling, Werner Bergbauer, Shunfeng Li |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Hydrogen Chemistry business.industry Polarity (physics) chemistry.chemical_element Gallium nitride 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Rod chemistry.chemical_compound Optics Chemical physics Etching (microfabrication) 0103 physical sciences General Materials Science Metalorganic vapour phase epitaxy Growth rate Gallium 0210 nano-technology business |
| Zdroj: | Crystal Growth & Design |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/cg101537m |
| Popis: | The influence of polarity during the MOVPE growth of GaN based sub-micrometer (sub-μm) rods has mostly been neglected up to now. In this paper we demonstrate that the surface polarity plays a crucial role for the morphology of the GaN sub-μm rods. Based on the differences between N-polar and Ga-polar surfaces, a model is suggested to explain the influence of various parameters on the morphology of GaN sub-μm rods for the first time. For Ga-polar GaN, the {10−11} r-planes, similar to N-polar (000−1) c-planes, are terminated by nitrogen atoms. These N-terminated surfaces can be passivated by hydrogen, which leads to a stable surface with low growth rates and therefore tends to keep a pyramidal shape with stable r-planes. For N-polar GaN, {10−1−1} r-planes can be modified by H2 etching, leading to the formation of more stable {1−100} m-planes, hence supporting the formation of sub-μm rods with vertical sidewalls. |
| Databáze: | OpenAIRE |
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