| Autor: |
Fang Wang, Zhiyi Liu, Tao Zhang, Mingsheng Long, Xiuxiu Wang, Runzhang Xie, Haonan Ge, Hao Wang, Jie Hou, Yue Gu, Xin Hu, Ze Song, Suofu Wang, Qingsong Dong, Kecai Liao, Yubing Tu, Tao Han, Feng Li, Zongyuan Zhang, Xingyuan Hou, Shaoliang Wang, Liang Li, Xueao Zhang, Dongxu Zhao, Chongxin Shan, Lei Shan, Weida Hu |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Advanced materials (Deerfield Beach, Fla.). 34(39) |
| ISSN: |
1521-4095 |
| Popis: |
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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