FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
| Autor: | Casamento, J., Nomoto, K., Nguyen, T. S., Lee, H., Savant, C., Li, L., Hickman, A., Maeda, T., Encomendero, J., Gund, V., Lal, A., Hwang, J. C. M., Xing, H. G., Jena, D. |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | 2022 International Electron Devices Meeting (IEDM). |
| Popis: | We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics. Comment: 4 pages, 8 figures, appeared in IEEE IEDM, December 2022 |
| Databáze: | OpenAIRE |
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