Laser direct writing of silicon field effect transistor sensors
| Autor: | Woongsik Nam, Minghao Qi, James I. Mitchell, Xianfan Xu, Chookiat Tansarawiput |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Materials science Physics and Astronomy (miscellaneous) Silicon Hybrid silicon laser Doping chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Chemical vapor deposition Laser law.invention Nanoscience and Nanotechnology chemistry law Hardware_INTEGRATEDCIRCUITS Surface roughness Field-effect transistor ULTRASENSITIVE ELECTRICAL DETECTION NANOWIRE NANOSENSORS LABEL-FREE BIOSENSORS INTERFACE ARRAYS |
| Zdroj: | Birck and NCN Publications |
| Popis: | We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794147] |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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