Physical analysis on ultrathin gate dielectric breakdown using TEM

Autor:	Lei Jun. Tang
Přispěvatelé:	Tung Chih Hang, Pey Kin Leong, School of Electrical and Electronic Engineering
Rok vydání:	2019
Předmět:	Materials science Engineering::Electrical and electronic engineering::Electronic apparatus and materials [DRNTU] business.industry Gate dielectric Electrical engineering Optoelectronics business
DOI:	10.32657/10356/3348
Popis:	In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate dielectric technology has been widely used in the current technology node. MASTER OF ENGINEERING (EEE)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01ddbefa68e3495e7ae6ff6c9983eab0 https://doi.org/10.32657/10356/3348 Zobrazit plný text záznamu