Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

Autor: C. Ostermaier, G. Pozzovivo, J.-F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J.-C. De Jaeger, L. Tóth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik, Jisoon Ihm, Hyeonsik Cheong
Přispěvatelé: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Jazyk: angličtina
Rok vydání: 2010
Předmět:
Zdroj: American Institute of Physics Conference Proceedings, 1399
30th International Conference on the Physics of Semiconductors, ICPS-30
30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩
DOI: 10.1063/1.3666669⟩
Popis: We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch‐resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir‐based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen‐containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state‐of‐the‐art normally‐off performance.
Databáze: OpenAIRE