Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering
Autor: | C. Ostermaier, G. Pozzovivo, J.-F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J.-C. De Jaeger, L. Tóth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik, Jisoon Ihm, Hyeonsik Cheong |
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Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
Jazyk: | angličtina |
Rok vydání: | 2010 |
Předmět: |
Interface layer
Materials science Interface engineering genetic structures business.industry Annealing (metallurgy) Gate stack 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Barrier layer Metal visual_art 0202 electrical engineering electronic engineering information engineering visual_art.visual_art_medium Optoelectronics 020201 artificial intelligence & image processing business Quantum tunnelling |
Zdroj: | American Institute of Physics Conference Proceedings, 1399 30th International Conference on the Physics of Semiconductors, ICPS-30 30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩ |
DOI: | 10.1063/1.3666669⟩ |
Popis: | We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch‐resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir‐based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen‐containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state‐of‐the‐art normally‐off performance. |
Databáze: | OpenAIRE |
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