Maintain Raman property in ZnS single crystal waveguide formed by multi-energy He ion implantation at 633 nm
| Autor: | Tao Liu, Wei-Jin Kong, Mei Qiao, Yan Cheng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics::Optics General Physics and Astronomy 02 engineering and technology 01 natural sciences Waveguide (optics) Ion 010309 optics Crystal symbols.namesake chemistry.chemical_compound 0103 physical sciences Projective range business.industry 021001 nanoscience & nanotechnology Zinc sulfide lcsh:QC1-999 Ion implantation chemistry symbols Optoelectronics 0210 nano-technology Raman spectroscopy business Single crystal lcsh:Physics |
| Zdroj: | Results in Physics, Vol 11, Iss, Pp 822-825 (2018) |
| ISSN: | 2211-3797 |
| Popis: | We report on the formation of planar waveguide in zinc sulfide (ZnS) single crystal by using multi-energy He ion implantation. The dark-mode spectrum are measured by prism coupling method. The guiding region in reconstructed refractive index profiles is about 1.55 μm, which is in good accordance with the projective range of the implanted He ions of (500 + 480 + 460) keV in the ZnS crystal. The near-field intensity distributions for measured and calculated show a good confinement of light in fundamental TM0 mode at 633 nm. The Raman spectra are measured at 633 nm and no significant change in the ZnS single crystal waveguide after multi-energy He ion implantation. Keywords: Waveguide, Ion implantation |
| Databáze: | OpenAIRE |
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