Fabrication of Directly Bonded Si Substrates with Hybrid Crystal Orientation for Advanced Bulk CMOS Technology

Autor:	Cécile Berne, Kira Tsyganenko, Fabrice Letertre, Olivier Rayssac, Frederic Allibert, Konstantin Bourdelle, Xavier Hebras, Christophe Figuet, Alice Boussagol, Audrey Lambert, Frank Fournel, Carlos Mazure
Rok vydání:	2006
Předmět:	Fabrication Materials science CMOS Hardware_INTEGRATEDCIRCUITS Crystal orientation Electronic engineering Nanotechnology Hardware_PERFORMANCEANDRELIABILITY
Zdroj:	ECS Transactions. 3:409-415
ISSN:	1938-6737 1938-5862
Popis:	Introduction of hybrid orientation substrates has led to the development of CMOS technologies in which NMOS transistors are fabricated on (100) Si and PMOS on (110) Si. This maximizes the crystal orientation dependent mobilities of electrons and holes. The Smart Cut technology has been successfully applied to fabricate hybrid orientation substrates with a buried oxide between the top Si layer and the bulk substrate having two different crystal orientations. This paper describes the application of the Smart Cut method for the fabrication of the directly (i.e. with no oxide in between) bonded 300 mm Si engineered substrates. The technological challenges, process flow and the results of the wafer characterization are presented and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ffdc3bdc86a7b267b383361f083543d5 https://doi.org/10.1149/1.2355775 Zobrazit plný text záznamu