The Hall effect in a-GdxSi1−x at the metal–insulator transition

Autor:	Winfried Teizer, R. C. Dynes, Frances Hellman
Rok vydání:	2003
Předmět:	Materials science Magnetoresistance Condensed matter physics Hall effect Metal–insulator transition Quantum Hall effect Conductivity Condensed Matter Physics Critical exponent Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Amorphous solid
Zdroj:	Physica E: Low-dimensional Systems and Nanostructures. 18:266-269
ISSN:	1386-9477
DOI:	10.1016/s1386-9477(02)01011-1
Popis:	We have measured the Hall effect in 3-d amorphous Gd x Si 1− x films in the critical regime of the metal–insulator transition (MIT) at T=400 mK . a-Gd x Si 1− x exhibits a large negative magnetoresistance which is independent of the orientation of the magnetic field H with respect to the film and allows an in situ tuning of the conductivity through the MIT with H . We find an electron-like Hall coefficient R H . As the material becomes less metallic, R H increases. We find that R H is a critical quantity with critical exponent ∼−1 (R H ∼(H−H C ) −1 ) .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff79364855dea0604e1e9195d81b8281 https://doi.org/10.1016/s1386-9477(02)01011-1 Zobrazit plný text záznamu Full Text from ScienceDirect