Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Autor:	S. Brehme, R. Brüggemann, Jean-Paul Kleider, M.E. Gueunier, W. Bronner
Rok vydání:	2004
Předmět:	Photocurrent Proton Ambipolar diffusion Chemistry Dark conductivity Fermi energy Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Nuclear magnetic resonance Microcrystalline silicon Materials Chemistry Ceramics and Composites Irradiation Electronic properties
Zdroj:	Journal of Non-Crystalline Solids. :477-480
ISSN:	0022-3093
DOI:	10.1016/j.jnoncrysol.2004.03.023
Popis:	We report on proton irradiation of microcrystalline silicon with 2 MeV protons and find a drop in the mobility–lifetime product related to an increase in the density of gap states as revealed by modulated photocurrent experiments. The dark conductivity also drops due to a shift in the Fermi energy by defect creation and re-balance of charge. The impact on the ambipolar diffusion length, representing the minority-carrier properties, is much smaller. The electronic properties of P and B doped samples are hardly affected. We discuss the implications for microcrystalline silicon pin solar cells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff3859512776743b3bb1786bb03e717d https://doi.org/10.1016/j.jnoncrysol.2004.03.023 Zobrazit plný text záznamu Full Text from ScienceDirect