A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

Autor:	Fon-Shan Huang, Wan-Thai Hsu, Wei-Su Chen, Chuan-Cheng Tu
Rok vydání:	1996
Předmět:	Materials science Fabrication business.industry Doping General Engineering Tantalum General Physics and Astronomy chemistry.chemical_element Gallium arsenide chemistry.chemical_compound chemistry Sputtering Silicide Optoelectronics MESFET Reactive-ion etching business
Zdroj:	Japanese Journal of Applied Physics. 35:2578
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.35.2578
Popis:	The tantalum silicide ( TaSi x ) was investigated for the application of self-aligned gate (SAG) GaAs metal-semiconductor field-effect transistors (MESFET). TaSi x film was deposited by sputtering with substrate bias from -100 V to +75 V. The optimal condition of substrate bias voltage is +50 V for MESFET process according to AES, XRD, and resistivity analysis. The Si+ implantation at 80 keV with dose 4×1013 cm-2 through thin TaSi x film was adopted for the channel doping. For the gate patterning, reactive ion etching (RIE) of TaSi x was performed in CF4+O2 (15% O2) mixture at total pressure 40 mTorr with RF power 60 W. A 2 µ m×50 µ m TaSi x SAG GaAs MESFET was then successfully fabricated. In this process, the TaSi x film was used for the gate material, encapsulating layer, and film for through implantation. This new method simplifies the fabrication process of self-aligned GaAs MESFET.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ff27c7e5bf4510bab89d273e8f94a41c https://doi.org/10.1143/jjap.35.2578 Zobrazit plný text záznamu