Optimization of growth conditions for undoped and doped GaAs layers using an empirical model of metalorganic vapor phase epitaxy

Autor:	A. A. Marmalyuk, E. V. Burlyaeva, D. E. Arbenin
Rok vydání:	2010
Předmět:	Inorganic Chemistry Materials science business.industry General Chemical Engineering Doping Vapor phase Materials Chemistry Metals and Alloys Optoelectronics Metalorganic vapour phase epitaxy business Epitaxy
Zdroj:	Inorganic Materials. 46:1-5
ISSN:	1608-3172 0020-1685
DOI:	10.1134/s0020168510010012
Popis:	We present semiempirical relations that quantify the influence of metalorganic vapor phase epitaxy (MOVPE) conditions on the parameters of GaAs-based epitaxial layers. These relations have been used to create a MOVPE training simulator system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fed95e8bcb41dbf497c8905a01931d98 https://doi.org/10.1134/s0020168510010012 Zobrazit plný text záznamu Plný text ve formátu PDF