Origin of Hole Selectivity and the Role of Defects in Low-Temperature Solution-Processed Molybdenum Oxide Interfacial Layer for Organic Solar Cells

Autor: Joachim Luther, Palani Balaya, Kim Hai Wong, Krishnamoorthy Ananthanarayanan
Rok vydání: 2012
Předmět:
Zdroj: The Journal of Physical Chemistry C. 116:16346-16351
ISSN: 1932-7455
1932-7447
DOI: 10.1021/jp303679y
Popis: A critical component in bulk-heterojunction (BHJ) organic photovoltaics (OPVs) is the charge-selective interfacial layer, which plays a vital role in achieving high device performance and stability. Here, we present the performance of molybdenum oxide (MoOx) hole selective interfacial layers for BHJ OPVs based on poly(3-hexylthiophene) (P3HT) donor and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) acceptor, prepared by a facile, low-temperature solution process. The results showed that the MoOx films enhanced device efficiency and stability in comparison to reference devices containing the conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) interfacial layer. Furthermore, a high fill factor (∼69%) close to the theoretical maximum value predicted for the P3HT:PCBM BHJ system was achieved. Despite their hole selective nature, ultraviolet photoemission spectroscopy (UPS) revealed that the MoOx films were n-type. This hole selective behavior can be explained by invoking band b...
Databáze: OpenAIRE