Origin of Hole Selectivity and the Role of Defects in Low-Temperature Solution-Processed Molybdenum Oxide Interfacial Layer for Organic Solar Cells
Autor: | Joachim Luther, Palani Balaya, Kim Hai Wong, Krishnamoorthy Ananthanarayanan |
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Rok vydání: | 2012 |
Předmět: |
Materials science
Organic solar cell Photoemission spectroscopy medicine.disease_cause Acceptor Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy PEDOT:PSS Chemical engineering medicine Organic chemistry Physical and Theoretical Chemistry Selectivity Layer (electronics) Solution process Ultraviolet |
Zdroj: | The Journal of Physical Chemistry C. 116:16346-16351 |
ISSN: | 1932-7455 1932-7447 |
DOI: | 10.1021/jp303679y |
Popis: | A critical component in bulk-heterojunction (BHJ) organic photovoltaics (OPVs) is the charge-selective interfacial layer, which plays a vital role in achieving high device performance and stability. Here, we present the performance of molybdenum oxide (MoOx) hole selective interfacial layers for BHJ OPVs based on poly(3-hexylthiophene) (P3HT) donor and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) acceptor, prepared by a facile, low-temperature solution process. The results showed that the MoOx films enhanced device efficiency and stability in comparison to reference devices containing the conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) interfacial layer. Furthermore, a high fill factor (∼69%) close to the theoretical maximum value predicted for the P3HT:PCBM BHJ system was achieved. Despite their hole selective nature, ultraviolet photoemission spectroscopy (UPS) revealed that the MoOx films were n-type. This hole selective behavior can be explained by invoking band b... |
Databáze: | OpenAIRE |
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