A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures

Autor:	Hong Chen, Hongling Xiao, Jieqin Ding, Cuimei Wang, Xiaoliang Wang, Xun Hou, Jingwen Zhang, Yang Bi, Qinwen Deng
Rok vydání:	2012
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Optoelectronics Heterojunction Polarization (waves) business Fermi gas Sheet resistance
Zdroj:	Applied Physics Letters. 101:182102
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4765086
Popis:	AlGaN layers were grown on InAlN/AlN/GaN heterostructure with various temperatures. The two-dimensional electron gas density and mobility in heterostructure with high temperature AlGaN were deteriorated which is attributed to the reverse polarization field of AlGaN and the degradation of InAlN structural quality and surface morphology. A 2 nm low temperature GaN spacer was inserted to reduce the risk of InAlN degradation. The improved structures demonstrated an increase of two-dimensional electron gas density and mobility compared to the heterostructures without the GaN spacer, which results in the reduction of sheet resistance. Particularly, at 855 °C, an enhancement of mobility in the improved structure indicates that the heterostructure is relatively stable at this temperature. At higher temperature of 920 °C, significant increase of sheet resistance indicates a sharp degradation of InAlN quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fe0b2c1ad76f6cfbd6edd8d7a11601e4 https://doi.org/10.1063/1.4765086 Zobrazit plný text záznamu