Second-order susceptibility χ(2) in Si waveguides

Autor:	Alessandro Pitanti, B. Dierre, Lorenzo Pavesi, E. Borga, A. Yeremian, Mher Ghulinyan, Paolo Bettotti, K. Fedus, R. Pierobon, Massimo Cazzanelli, G. Pucker, Federica Bianco
Rok vydání:	2011
Předmět:	Silicon photonics Materials science Silicon business.industry Hybrid silicon laser Analytical chemistry chemistry.chemical_element Nonlinear optics Nanosecond Waveguide (optics) Overlayer chemistry Femtosecond Optoelectronics business
Zdroj:	8th IEEE International Conference on Group IV Photonics.
DOI:	10.1109/group4.2011.6053704
Popis:	Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd623857d62ccd2a5de6446d38f446a6 https://doi.org/10.1109/group4.2011.6053704 Zobrazit plný text záznamu