A 15-ns 1024-bit fully static MOS RAM
Autor: | Toshio Wada, S. Matsue, O. Kudoh, Y. Nagahashi |
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Rok vydání: | 1978 |
Předmět: |
Dynamic random-access memory
business.industry Computer science Circuit design Electrical engineering Multiple-emitter transistor Semiconductor memory Mixed-signal integrated circuit Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Transistor–transistor logic law.invention Integrated injection logic Application-specific integrated circuit Transistor count law Hardware_INTEGRATEDCIRCUITS Electronic engineering Field-effect transistor Electrical and Electronic Engineering Physical design business Hardware_LOGICDESIGN |
Zdroj: | IEEE Journal of Solid-State Circuits. 13:635-639 |
ISSN: | 1558-173X 0018-9200 |
Popis: | A fully static 1K bit, TTL compatible, 5-V only MOS RAM has been achieved by using improved process technology and optimized circuit design. Address access time is less than 15 ns and power dissipation is less than 320 mW at room temperature. |
Databáze: | OpenAIRE |
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