29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display

Autor:	Yukiharu Uraoka, Mami N. Fujii, Juan Paolo Bermundo, Ryoko Miyanaga, Takanori Takahashi, Mutsunori Uenuma
Rok vydání:	2021
Předmět:	chemistry.chemical_compound Reliability (semiconductor) Materials science chemistry business.industry Thin-film transistor Oxide Optoelectronics Degradation (geology) business Mechanism (sociology)
Zdroj:	SID Symposium Digest of Technical Papers. 52:395-398
ISSN:	2168-0159 0097-966X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fd31e334da2460fbd5fe3f88aac6a142 https://doi.org/10.1002/sdtp.15134 Zobrazit plný text záznamu Plný text