On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front

Autor:	S. K. Lyubutin, A. I. Gusev, S. N. Tsyranov, B.G. Slovikovsky, S. N. Rukin
Rok vydání:	2014
Předmět:	Zener effect Chemistry Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Switching time Amplitude Electric field Picosecond Rise time Atomic physics Current density Diode
Zdroj:	Semiconductors. 48:1067-1078
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782614080132
Popis:	A silicon closing switch with successive breakdown mode of diode structures based on a superfast ionization front is studied. In a coaxial line with a 48-Ω wave impedance, pulses with an amplitude above 100 kV and a rise time of 40 ps at an amplitude level of 0.3–0.9 are obtained. The maximum output-voltage rise rate is 2 MV/ns at a switching-current peak density of 60 kA/cm2. Numerical simulation shows that the switching time of individual structures of the device is 7–15 ps at a reverse-voltage rise rate of >100 kV/ns per structure under experimental conditions. The electric field in the p-n junction reaches the Zener breakdown threshold (∼106 V/cm) even in the case where the diode structure contains process-induced deep-level centers with concentrations of up to 1013 cm−3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc8e52fd2f0ca038c28faa28dcc3784a https://doi.org/10.1134/s1063782614080132 Zobrazit plný text záznamu Plný text ve formátu PDF